publications
67. J. H. Kim, M. P. Hokmabadi, S. Balci, E. Rivera, D. Wilbert, P. Kung, and S. M. Kim, “Investigation of robust flexible conformal THz
perfect metamaterial Absorber”, App. Phys. A. (will be online 2016)
66. M. P. Hokmabadi, E. Philips, E. Rivera, P. Kung, and S.M. Kim, “Plasmon induced transparency by hybridizing concentric-twisted double split ring resonators”, Nature Scientific Reports 5: 15735 (2015) 10.1038/srep15735
65. M. P. Hokmabadi, J. H. Kim, E. Rivera, P. Kung, S. M. Kim, “Impact of substrate and bright resonances on group velocity in metamaterial without dark resonator”, Nature Scientific Reports, 5: 14373 (2015) doi: 10.1038/srep14373
64. J.L. Pau, J. Waters, E. Rivera, S.M. Kim, and P. Kung, "Low leakage current ZnO nanowire Schottky photodiodes built by dielectrophoretic contact," IEEE Electron Device Letters, v36,n8, 814-816 (2015) 10.1109/LED.2015.2442678
63. M. P. Hokmabadi, M. Zhu, P. Kung, and S.M. Kim, “Comprehensive study of terahertz metamaterial absorber by applying a hybrid approach on its circuit analogue”, Optical Materials Express 5(8):1772 (2015) doi: 10.1364/OME.5.001772
62. W. J. Lee, S. H. Jung, J. M Bae, J. W. Ma, K. S. Jeong, J. H. Kim, S. H. Oh, S. M. Kim, M. H. Cho, J. Park, “Nonequilibrium Photoexcited-Carrier Dynamics at Confined Surface of Si1-xGex Nanowires Measured by Optical Pump-THz Probe Spectroscopy”, Nature Scientific Reports (under review, 2015)
61. A. Garcia, C. García Núñez, P. Rodraguez, G. Shen, S. M. Kim, P. Kung, J. Piqueras, J. Pau, “Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays" Nanotechnology, 26, no. 11 (2015): 115502.
60. D. S. Wilbert, M. Hokmabadi, P. Kung, and S. M. Kim, “Spectroscopic Characteristics of Three Dimensional Split-Ring Resonator Arrays at Terahertz Frequencies”, Journal of Nanoscience and Nanotechnology, 15, no. 3, 2289-2293 (2015) http://dx.doi.org/10.1166/jnn.2015.10221
59. S. M. Kim, and M. Hokmabadi, “Terahertz Spectroscopy of biological Molecules,” in Terahertz biomedical Science and Technology, pp 153-172, Edited by J. H. Son, Taylor &Francis Books, Inc (2014)
58. S.M. Kim and P. Kung, “Hybrid nanostructures for photovoltaic applications,” in Dekker Encyclopedia of Nanoscience & Nanotechnology, 3rd Ed., eds. S.E. Lyshevski, (Boca Raton: CRC Press, 2014).
57. M. Hokmabadi, D. S. Wilbert, P. Kung, and S.M. Kim, “Study of polarization dependent frequency selective THz stereometamaterial perfect absorber”, Phys. Rev. Appl. no. 4: 044003 (2014) http://dx.doi.org/10.1103/PhysRevApplied.1.044003
56. A. Mohanta, J. Simmons, H. O. Everitt, G. Shen, S. M. Kim, and P. Kung, “Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition”, J. of Luminescence, V 146, 470 (2014)
http://dx.doi.org/10.1016/j.jlumin.2013.10.028
55. C. García Núñez, J.L. Pau, E. Ruíz, A. García Marín, B.J. García, J. Piqueras, G. Shen, D.S. Wilbert, S.M. Kim, P. Kung, “Enhanced fabrication process of zinc oxide nanowires for optoelectronics”, Thin Solid Films, (2014) http://dx.doi.org/10.1016/j.tsf.2013.12.011
54. C.G. Nunez, A.F. Brana, J.L. Pau, D. Ghita, B.J. Garcia, G. Shen, D.S. Wilbert, S.M. Kim, and P. Kung, "Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy," Journal of Applied Physics 115, no. 3 (2014): 034307.
53. D. Wilbert, M. Hokmabadi, P. Kung, and S. M. Kim, “Equivalent-Circuit Interpretation of the Polarization Insensitive Performance of THz Metamaterial Absorbers”, IEEE Trans. Terahertz Sci. and Tech. V3, n6, 846-850 (2013)
52. W. Baughman, H. Yokus, S. Balci, D. S. Wilbert, P. Kung, S. M. Kim, "Observation of hydrofluoric acid burns on osseous tissues by means of terahertz spectroscopic Imaging”, IEEE Trans. Terahertz Sci. and Tech. V3, n4, 387 (2013)
51. M. Hokmabadi, D. S. Wilbert, P. Kung, S. M. Kim, “Design and analysis of perfect terahertz absorber by a novel dynamic circuit model”, Opt. Exp. vol 21, n14 16455-16465 (2013) 10.1364/OE.21.016455
50. W. Baughman, H. Yokus, S. Balci, D. S. Wilbert, P. Kung, S. M. Kim, "Observation of hydrofluoric acid burns on osseous tissues by means of terahertz spectroscopic Imaging," IEEE Journal of Biomedical and Health Informatics, vol 17, n4 798-805 (2013) 10.1109/JBHI.2013.2243158
49. G. Shen, N. Dawahre, J. Waters, S.M. Kim, and P. Kung, "Growth, doping, and characterization of ZnO nanowire arrays," Journal of Vacuum Science and Technology B 31, no. 4 (2013): 041803.
48. N. Dawahre, G. Shen, S.N. Renfrow, S.M. Kim, and P. Kung, "Atom probe tomography of AlInN/GaN HEMT structures," Journal of Vacuum Science and Technology B 31, no. 4 (2013): 041802.
47. C. García Núñez, A. F. Braña, J. L. Pau, D. Ghita, B. J. García, G. Shen, D. S. Wilbert, S. M. Kim, P. Kung, Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy, Journal of Crystal Growth, vol 372, 205-212 (2013).
46. M. Hokmabadi, D. S. Wilbert, P. Kung, and S. M. Kim, “Terahertz metamaterial absorbers,” Terhertz Science and Technology, vol. 6, No. 1, 40-58 (2013).
45. L. Larson, S.M. Kim, P. Kung, Q. Yu, Z. Liu, W. Geertz, “Nanotechnology in electronics,” in Organization for Economic Co-operation and Development (OECD) / Working Party on Manufactured Nanomaterial (WPMN), eds. W. Trybula and D. Newberry, (2012).
44. S. Balci, W. Baughman, D.S. Wilbert, G. Shen, P. Kung, S.M. Kim, “Characteristics of THz carrier dynamics in GaN thin film and ZnO nanowires by temperature dependent terahertz time domain spectroscopy measurement” Solid. State. Electron. 78, p68-74 (2012)
43. N. Dawahre, G. Shen, ,S. Balci, W. Baughman, D. S. Wilbert, N. Harris, L. Butler, R. Martens, S. M. Kim, and P. Kung, “Atom Probe Tomography of ZnO Nanowires”, J. of Electronic Materials 41, no. 5 801-808. (2012)
42. S. M. Kim, W. Baughman, D. S. Wilbert, L. Butler, M. Bolus, S. Balci, and P. Kung, “High sensitivity and high selectivity terahertz biomedical imaging”, Chinese Opt. Lett. 9, no 10 (2011)
41. D.S. Wilbert, G. Shen, N. Dawahre, P. Kung, and S.M. Kim, "High resolution, two-dimensional image mapping of ZnO nanowires by confocal microphotoluminescence and microRaman spectroscopy," Journal of Nanoscience and Nanotechnology 11, no.7, 5898-5903 (2011)
40. K.W. Park, J.S. Kim, P. Kung, and S.M. Kim, “Thermally stable deep-blue Ba1.2Ca0.8SiO4:Ce3" phosphor for white-light-emitting diode,” Journal of Luminescence 130, no. 7, 1292-1294. (2010)
39. K.W. Park, J.B. Lee, J.H. Park, J.S. Kim, P. Kung, S.M. Kim, and G.C. Kim, "White-light generation through Ce3+/Mn2+-codoped and Eu2+-doped Ba1.2Ca0.8SiO4 T-phase phosphors," Journal of Luminescence 130, no. 12, 2442-2445. (2010)
38. J.H. Park, K.W. Park, J. Lee, J.S. Kim, S.M. Kim, and P. Kung, “Excellent brightness with shortening lifetime of textured Zn2SiO4:Mn2+ phosphor films on quartz glass,” Japanese Journal of Applied Physics Letters 49, no. 4, 042603. (2010)
37. N.S. Choi, K.W. Park, B.W. Park, X.M. Zhang, J.S. Kim, P. Kung, and S.M. Kim, “Eu2+-Mn2+ interaction in white-light-emitting T-phase (Ba,Ca)2SiO4:Eu2+,Mn2+ phosphor,” Journal of Luminescence 130, no. 4, 560-566. (2010)
36. K.W. Park, J.S. Kim, P. Kung, and S.M. Kim, “New green phosphor Ba1.2Ca0.8-xSiO4:xEu2+ for white-light-emitting diode,” Japanese Journal of Applied Physics 49, no. 2, 020214 (2010)
35. K.W. Park, N.S. Choi, J.S. Kim, S.M. Kim, and P. Kung, “Temperature and excitation power-invariant white-light emission of T-phase (Ba,Ca)2SiO4:Eu2+,Mn2+ phosphors,” Solid State Communications 150, no. 7-8, 329-332 (2010)
34. S. M. Kim, H. B. Yuen, F. Hatami, A. Chin, and J. S. Harris, “Optical properties dilute nitride InN(As)Sb quantum well and quantum dot grown by molecular beam epitaxy”, J. of Electronic Materials, v37 n12, 1774 (2008)
33. H.B. Yuen, S.M. Kim, F. Hatami, A. Chin and J.S. Harris “Mid-Infrared Luminescence of an InNAsSb/InAs Single Quantum Well Grown by Molecular Beam Epitaxy”. Appl. Phys. Lett. v.89, 121921 (2006)
32. F. Hatami, S.M. Kim, H.B. Yuen, and J.S. Harris, “InSb and InSb:N Multiples Quantum Dots”, Appl. Phys. Lett. v.89, 121921 (2006)
31. S.M. Kim, F.Hatami, A.W. Kurian, D. King, J. Ford, J. S, Harris, G. Scalari, M. Giovannini, N. Hoyler, J. Faist, and G. Harris, “Bio-medical terahertz imaging with a quantum cascade laser”, Virtual J. of Bio. Phys. v.11, n8, Apr. (2006)
30. S.M. Kim, F.Hatami, A.W. Kurian, D. King, J. Ford, J. S, Harris, G. Scalari, M. Giovannini, N. Hoyler, J. Faist, and G. Harris, “Bio-medical terahertz imaging with a quantum cascade laser”, Appl. Phys. Lett. v.88, 153903, Apr. (2006)
29. S.M. Kim, and J. S. Harris, “Multi-spectral operation of self-assembled InGaAs quantum dot infrared photodetector”, Virtual J. of Nano. Sci. Tech. v.10, n20 (2004)
28. S.M. Kim, and J. S. Harris, “Multi-color quantum dot infrared photodetectors”, IEEE Photonics Tech. Lett. v.16, 2538 (2004)
27. S.M. Kim, and J. S. Harris, “Multi-spectral operation of self-assembled InGaAs quantum dot infrared photodetector”, Appl. Phys. Lett. v.85, 4154 (2004)
26. S.M. Kim, and J. S. Harris, “Multi-color quantum dot infrared photodetectors”, TMS Letters, n.4,124 (2004)
25. S.M. Kim, Y. Wang, M. Keever and J. S. Harris, “High Modulation Characteristics of 1.3µm InGaAs Quantum Dots Lasers”, IEEE Photonics Tech. Lett. v.16, 377 (2004)
24. S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim, and J.S. Harris, "1.5 µm GaInNAs(Sb) Lasers Grown on GaAs by MBE," J. Cryst. Growth v. 251, pp. 367-71 (2003)
23. S. Xie, R.W. Herick, D. Chamberlin, J. Rosner, S. Mchugo, G. Girolami, M. Mayonte, S. Kim, W. Widjaja “Failure mode analysis of oxide VCSEL in high humidity and high temperature,” J. of Lightwave Tech., v21, 1013 (2003)
22. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim and J. S. Harris Jr. “Long Wavelength GaInNAs(Sb) Lasers on GaAs”, IEEE Journal of Quantum Electronics, v38, 1260 (2002)
21. W. Ha, V. Gambin, M. Wistey, S. Kim and J. Harris, “High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4 µm”, Inst. Phys Conf. Ser. v.170 165-169 (2002)
20. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim and J. S. Harris Jr, “Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers” Electronic Lett. v.38, 277 (2002)
19. V. Gambin, W. Ha, S. Bank, M. Wistey, H. Yuen, S. Kim and J. S. Harris Jr., “GaInNAsSb for 1.3-1.6 µm long wavelength lasers grown by molecular beam epitaxy”, IEEE J. of Quantum. Elect. Select. Topics , v.8, 795 (2002)
18. W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim and J. S. Harris Jr., “Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating at 1.38µm”, IEEE Photonics Technology Lett. v.14, 591 (2002)
17. S. Kim and M. Razeghi, “Advances in Quantum Dot Structures”, Semicond. and Semimetals, V.73, pp119-214 (2001)
16. S. Kim and M. Razeghi, “Recent advances in quantum dot optoelectronic devices and future trends” Handbook of Advanced Electronic and Photonic Materials and Devices - Volume 2: Semiconductor Devices, pp. 133-153, Academic Press (2000).
15. S. Kim, M. Erdtmann, and M. Razeghi , “Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetector”, J. Korean. Phys. Soc. v.35 (supp.2), 303 (1999)
14. S. Kim and M. Razeghi, “Quantum Dot Optoelectronic Devices,” Recent Research Developments in Applied Physics, Research Signpost (1998).
13. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi, “Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector”, Appl. Phys. Lett. v.73, 963 (1998)
12. S. Kim, M. Erdtmann, and M. Razeghi, “The long wavelength luminescence observation from the self-organized InGaAs quantum dots grown on (100) GaAs substrate by metalorganic chemical vapor deposition”, Material Sci. Forum. v.258, 1643 (1997)
11. M. Erdtmann, S. Kim, and M. Razeghi, “Localized epitaxy for vertical cavity surface emitting laser applications”, Material Sci. Forum. v.258, 1637 (1997)
10. B. Lane, D. Wu, H.J.Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon, and M. Razeghi, “Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure”, Appl. Phys. Lett. v.70, 1447 (1997)
9. J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi, “InAsSbP/InAsSb/InAs laser diodes (l=3.2 µm) grown by low-pressure metal-organic chemical-vapor deposition”, Appl. Phys. Lett. v.70, 40 (1997)
8. S. Kim, M. Erdtmann, D. Wu, E. Kaas, H. Yi, J. Diaz, and M. Razeghi, “Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition”, Appl. Phys. Lett. v.69, 1614 (1996)
7. H. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L. Wang, and M. Razeghi, “Comparison of Gain and Threshold Current Density for InGaAsP/GaAs (λ=808nm) lasers with different quantum well thickness”, J. Appl. Phys. v.79, 8832 (1996)
6. J.D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi, “ 8-13 µm InAsSb heterojunction photodiode operating at near room temperature”, Appl. Phys. Lett. v.67, 2645 (1995)
5. J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, and M. Razeghi, “Background limited performance in p-doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetector”, Appl. Phys. Lett. v.67, 22 (1995)
4. H. Yi, J. Diaz, L.J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, and M.Razeghi, “Optimized structure for InGaAsP/GaAs 808 nm high power lasers”, Appl. Phys. Lett. v.66, 3251 (1995)
3. M. Razeghi, I. Eliashevich, J. Diaz, H.J. Yi, S. Kim, M. Erdtmann, D. Wu, L.J. Wang, “High Power aluminum-free InGaAsP/GaAs pumping diode lasers”, Materials Science and Engineering B35, 34 (1995)
2. J. Diaz, H. Yi, C. Jelen, S. Kim, S. Slivken, I. Eliashevich, M. Erdtmann, D. Wu, G. Lukas, and M. Razeghi, “High-Temperature Reliability of Aluminum-free 980 nm and 808nm Laser diodes”, Inst. Phys. Conf. Ser. v.145, 1041 (1995)
1. X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi, “Correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices”, Appl. Phys. Lett. v.65, 2812 (1994)
perfect metamaterial Absorber”, App. Phys. A. (will be online 2016)
66. M. P. Hokmabadi, E. Philips, E. Rivera, P. Kung, and S.M. Kim, “Plasmon induced transparency by hybridizing concentric-twisted double split ring resonators”, Nature Scientific Reports 5: 15735 (2015) 10.1038/srep15735
65. M. P. Hokmabadi, J. H. Kim, E. Rivera, P. Kung, S. M. Kim, “Impact of substrate and bright resonances on group velocity in metamaterial without dark resonator”, Nature Scientific Reports, 5: 14373 (2015) doi: 10.1038/srep14373
64. J.L. Pau, J. Waters, E. Rivera, S.M. Kim, and P. Kung, "Low leakage current ZnO nanowire Schottky photodiodes built by dielectrophoretic contact," IEEE Electron Device Letters, v36,n8, 814-816 (2015) 10.1109/LED.2015.2442678
63. M. P. Hokmabadi, M. Zhu, P. Kung, and S.M. Kim, “Comprehensive study of terahertz metamaterial absorber by applying a hybrid approach on its circuit analogue”, Optical Materials Express 5(8):1772 (2015) doi: 10.1364/OME.5.001772
62. W. J. Lee, S. H. Jung, J. M Bae, J. W. Ma, K. S. Jeong, J. H. Kim, S. H. Oh, S. M. Kim, M. H. Cho, J. Park, “Nonequilibrium Photoexcited-Carrier Dynamics at Confined Surface of Si1-xGex Nanowires Measured by Optical Pump-THz Probe Spectroscopy”, Nature Scientific Reports (under review, 2015)
61. A. Garcia, C. García Núñez, P. Rodraguez, G. Shen, S. M. Kim, P. Kung, J. Piqueras, J. Pau, “Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays" Nanotechnology, 26, no. 11 (2015): 115502.
60. D. S. Wilbert, M. Hokmabadi, P. Kung, and S. M. Kim, “Spectroscopic Characteristics of Three Dimensional Split-Ring Resonator Arrays at Terahertz Frequencies”, Journal of Nanoscience and Nanotechnology, 15, no. 3, 2289-2293 (2015) http://dx.doi.org/10.1166/jnn.2015.10221
59. S. M. Kim, and M. Hokmabadi, “Terahertz Spectroscopy of biological Molecules,” in Terahertz biomedical Science and Technology, pp 153-172, Edited by J. H. Son, Taylor &Francis Books, Inc (2014)
58. S.M. Kim and P. Kung, “Hybrid nanostructures for photovoltaic applications,” in Dekker Encyclopedia of Nanoscience & Nanotechnology, 3rd Ed., eds. S.E. Lyshevski, (Boca Raton: CRC Press, 2014).
57. M. Hokmabadi, D. S. Wilbert, P. Kung, and S.M. Kim, “Study of polarization dependent frequency selective THz stereometamaterial perfect absorber”, Phys. Rev. Appl. no. 4: 044003 (2014) http://dx.doi.org/10.1103/PhysRevApplied.1.044003
56. A. Mohanta, J. Simmons, H. O. Everitt, G. Shen, S. M. Kim, and P. Kung, “Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition”, J. of Luminescence, V 146, 470 (2014)
http://dx.doi.org/10.1016/j.jlumin.2013.10.028
55. C. García Núñez, J.L. Pau, E. Ruíz, A. García Marín, B.J. García, J. Piqueras, G. Shen, D.S. Wilbert, S.M. Kim, P. Kung, “Enhanced fabrication process of zinc oxide nanowires for optoelectronics”, Thin Solid Films, (2014) http://dx.doi.org/10.1016/j.tsf.2013.12.011
54. C.G. Nunez, A.F. Brana, J.L. Pau, D. Ghita, B.J. Garcia, G. Shen, D.S. Wilbert, S.M. Kim, and P. Kung, "Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy," Journal of Applied Physics 115, no. 3 (2014): 034307.
53. D. Wilbert, M. Hokmabadi, P. Kung, and S. M. Kim, “Equivalent-Circuit Interpretation of the Polarization Insensitive Performance of THz Metamaterial Absorbers”, IEEE Trans. Terahertz Sci. and Tech. V3, n6, 846-850 (2013)
52. W. Baughman, H. Yokus, S. Balci, D. S. Wilbert, P. Kung, S. M. Kim, "Observation of hydrofluoric acid burns on osseous tissues by means of terahertz spectroscopic Imaging”, IEEE Trans. Terahertz Sci. and Tech. V3, n4, 387 (2013)
51. M. Hokmabadi, D. S. Wilbert, P. Kung, S. M. Kim, “Design and analysis of perfect terahertz absorber by a novel dynamic circuit model”, Opt. Exp. vol 21, n14 16455-16465 (2013) 10.1364/OE.21.016455
50. W. Baughman, H. Yokus, S. Balci, D. S. Wilbert, P. Kung, S. M. Kim, "Observation of hydrofluoric acid burns on osseous tissues by means of terahertz spectroscopic Imaging," IEEE Journal of Biomedical and Health Informatics, vol 17, n4 798-805 (2013) 10.1109/JBHI.2013.2243158
49. G. Shen, N. Dawahre, J. Waters, S.M. Kim, and P. Kung, "Growth, doping, and characterization of ZnO nanowire arrays," Journal of Vacuum Science and Technology B 31, no. 4 (2013): 041803.
48. N. Dawahre, G. Shen, S.N. Renfrow, S.M. Kim, and P. Kung, "Atom probe tomography of AlInN/GaN HEMT structures," Journal of Vacuum Science and Technology B 31, no. 4 (2013): 041802.
47. C. García Núñez, A. F. Braña, J. L. Pau, D. Ghita, B. J. García, G. Shen, D. S. Wilbert, S. M. Kim, P. Kung, Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy, Journal of Crystal Growth, vol 372, 205-212 (2013).
46. M. Hokmabadi, D. S. Wilbert, P. Kung, and S. M. Kim, “Terahertz metamaterial absorbers,” Terhertz Science and Technology, vol. 6, No. 1, 40-58 (2013).
45. L. Larson, S.M. Kim, P. Kung, Q. Yu, Z. Liu, W. Geertz, “Nanotechnology in electronics,” in Organization for Economic Co-operation and Development (OECD) / Working Party on Manufactured Nanomaterial (WPMN), eds. W. Trybula and D. Newberry, (2012).
44. S. Balci, W. Baughman, D.S. Wilbert, G. Shen, P. Kung, S.M. Kim, “Characteristics of THz carrier dynamics in GaN thin film and ZnO nanowires by temperature dependent terahertz time domain spectroscopy measurement” Solid. State. Electron. 78, p68-74 (2012)
43. N. Dawahre, G. Shen, ,S. Balci, W. Baughman, D. S. Wilbert, N. Harris, L. Butler, R. Martens, S. M. Kim, and P. Kung, “Atom Probe Tomography of ZnO Nanowires”, J. of Electronic Materials 41, no. 5 801-808. (2012)
42. S. M. Kim, W. Baughman, D. S. Wilbert, L. Butler, M. Bolus, S. Balci, and P. Kung, “High sensitivity and high selectivity terahertz biomedical imaging”, Chinese Opt. Lett. 9, no 10 (2011)
41. D.S. Wilbert, G. Shen, N. Dawahre, P. Kung, and S.M. Kim, "High resolution, two-dimensional image mapping of ZnO nanowires by confocal microphotoluminescence and microRaman spectroscopy," Journal of Nanoscience and Nanotechnology 11, no.7, 5898-5903 (2011)
40. K.W. Park, J.S. Kim, P. Kung, and S.M. Kim, “Thermally stable deep-blue Ba1.2Ca0.8SiO4:Ce3" phosphor for white-light-emitting diode,” Journal of Luminescence 130, no. 7, 1292-1294. (2010)
39. K.W. Park, J.B. Lee, J.H. Park, J.S. Kim, P. Kung, S.M. Kim, and G.C. Kim, "White-light generation through Ce3+/Mn2+-codoped and Eu2+-doped Ba1.2Ca0.8SiO4 T-phase phosphors," Journal of Luminescence 130, no. 12, 2442-2445. (2010)
38. J.H. Park, K.W. Park, J. Lee, J.S. Kim, S.M. Kim, and P. Kung, “Excellent brightness with shortening lifetime of textured Zn2SiO4:Mn2+ phosphor films on quartz glass,” Japanese Journal of Applied Physics Letters 49, no. 4, 042603. (2010)
37. N.S. Choi, K.W. Park, B.W. Park, X.M. Zhang, J.S. Kim, P. Kung, and S.M. Kim, “Eu2+-Mn2+ interaction in white-light-emitting T-phase (Ba,Ca)2SiO4:Eu2+,Mn2+ phosphor,” Journal of Luminescence 130, no. 4, 560-566. (2010)
36. K.W. Park, J.S. Kim, P. Kung, and S.M. Kim, “New green phosphor Ba1.2Ca0.8-xSiO4:xEu2+ for white-light-emitting diode,” Japanese Journal of Applied Physics 49, no. 2, 020214 (2010)
35. K.W. Park, N.S. Choi, J.S. Kim, S.M. Kim, and P. Kung, “Temperature and excitation power-invariant white-light emission of T-phase (Ba,Ca)2SiO4:Eu2+,Mn2+ phosphors,” Solid State Communications 150, no. 7-8, 329-332 (2010)
34. S. M. Kim, H. B. Yuen, F. Hatami, A. Chin, and J. S. Harris, “Optical properties dilute nitride InN(As)Sb quantum well and quantum dot grown by molecular beam epitaxy”, J. of Electronic Materials, v37 n12, 1774 (2008)
33. H.B. Yuen, S.M. Kim, F. Hatami, A. Chin and J.S. Harris “Mid-Infrared Luminescence of an InNAsSb/InAs Single Quantum Well Grown by Molecular Beam Epitaxy”. Appl. Phys. Lett. v.89, 121921 (2006)
32. F. Hatami, S.M. Kim, H.B. Yuen, and J.S. Harris, “InSb and InSb:N Multiples Quantum Dots”, Appl. Phys. Lett. v.89, 121921 (2006)
31. S.M. Kim, F.Hatami, A.W. Kurian, D. King, J. Ford, J. S, Harris, G. Scalari, M. Giovannini, N. Hoyler, J. Faist, and G. Harris, “Bio-medical terahertz imaging with a quantum cascade laser”, Virtual J. of Bio. Phys. v.11, n8, Apr. (2006)
30. S.M. Kim, F.Hatami, A.W. Kurian, D. King, J. Ford, J. S, Harris, G. Scalari, M. Giovannini, N. Hoyler, J. Faist, and G. Harris, “Bio-medical terahertz imaging with a quantum cascade laser”, Appl. Phys. Lett. v.88, 153903, Apr. (2006)
29. S.M. Kim, and J. S. Harris, “Multi-spectral operation of self-assembled InGaAs quantum dot infrared photodetector”, Virtual J. of Nano. Sci. Tech. v.10, n20 (2004)
28. S.M. Kim, and J. S. Harris, “Multi-color quantum dot infrared photodetectors”, IEEE Photonics Tech. Lett. v.16, 2538 (2004)
27. S.M. Kim, and J. S. Harris, “Multi-spectral operation of self-assembled InGaAs quantum dot infrared photodetector”, Appl. Phys. Lett. v.85, 4154 (2004)
26. S.M. Kim, and J. S. Harris, “Multi-color quantum dot infrared photodetectors”, TMS Letters, n.4,124 (2004)
25. S.M. Kim, Y. Wang, M. Keever and J. S. Harris, “High Modulation Characteristics of 1.3µm InGaAs Quantum Dots Lasers”, IEEE Photonics Tech. Lett. v.16, 377 (2004)
24. S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim, and J.S. Harris, "1.5 µm GaInNAs(Sb) Lasers Grown on GaAs by MBE," J. Cryst. Growth v. 251, pp. 367-71 (2003)
23. S. Xie, R.W. Herick, D. Chamberlin, J. Rosner, S. Mchugo, G. Girolami, M. Mayonte, S. Kim, W. Widjaja “Failure mode analysis of oxide VCSEL in high humidity and high temperature,” J. of Lightwave Tech., v21, 1013 (2003)
22. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim and J. S. Harris Jr. “Long Wavelength GaInNAs(Sb) Lasers on GaAs”, IEEE Journal of Quantum Electronics, v38, 1260 (2002)
21. W. Ha, V. Gambin, M. Wistey, S. Kim and J. Harris, “High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4 µm”, Inst. Phys Conf. Ser. v.170 165-169 (2002)
20. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim and J. S. Harris Jr, “Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers” Electronic Lett. v.38, 277 (2002)
19. V. Gambin, W. Ha, S. Bank, M. Wistey, H. Yuen, S. Kim and J. S. Harris Jr., “GaInNAsSb for 1.3-1.6 µm long wavelength lasers grown by molecular beam epitaxy”, IEEE J. of Quantum. Elect. Select. Topics , v.8, 795 (2002)
18. W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim and J. S. Harris Jr., “Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating at 1.38µm”, IEEE Photonics Technology Lett. v.14, 591 (2002)
17. S. Kim and M. Razeghi, “Advances in Quantum Dot Structures”, Semicond. and Semimetals, V.73, pp119-214 (2001)
16. S. Kim and M. Razeghi, “Recent advances in quantum dot optoelectronic devices and future trends” Handbook of Advanced Electronic and Photonic Materials and Devices - Volume 2: Semiconductor Devices, pp. 133-153, Academic Press (2000).
15. S. Kim, M. Erdtmann, and M. Razeghi , “Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetector”, J. Korean. Phys. Soc. v.35 (supp.2), 303 (1999)
14. S. Kim and M. Razeghi, “Quantum Dot Optoelectronic Devices,” Recent Research Developments in Applied Physics, Research Signpost (1998).
13. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi, “Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector”, Appl. Phys. Lett. v.73, 963 (1998)
12. S. Kim, M. Erdtmann, and M. Razeghi, “The long wavelength luminescence observation from the self-organized InGaAs quantum dots grown on (100) GaAs substrate by metalorganic chemical vapor deposition”, Material Sci. Forum. v.258, 1643 (1997)
11. M. Erdtmann, S. Kim, and M. Razeghi, “Localized epitaxy for vertical cavity surface emitting laser applications”, Material Sci. Forum. v.258, 1637 (1997)
10. B. Lane, D. Wu, H.J.Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon, and M. Razeghi, “Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure”, Appl. Phys. Lett. v.70, 1447 (1997)
9. J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi, “InAsSbP/InAsSb/InAs laser diodes (l=3.2 µm) grown by low-pressure metal-organic chemical-vapor deposition”, Appl. Phys. Lett. v.70, 40 (1997)
8. S. Kim, M. Erdtmann, D. Wu, E. Kaas, H. Yi, J. Diaz, and M. Razeghi, “Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition”, Appl. Phys. Lett. v.69, 1614 (1996)
7. H. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L. Wang, and M. Razeghi, “Comparison of Gain and Threshold Current Density for InGaAsP/GaAs (λ=808nm) lasers with different quantum well thickness”, J. Appl. Phys. v.79, 8832 (1996)
6. J.D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi, “ 8-13 µm InAsSb heterojunction photodiode operating at near room temperature”, Appl. Phys. Lett. v.67, 2645 (1995)
5. J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, and M. Razeghi, “Background limited performance in p-doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetector”, Appl. Phys. Lett. v.67, 22 (1995)
4. H. Yi, J. Diaz, L.J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, and M.Razeghi, “Optimized structure for InGaAsP/GaAs 808 nm high power lasers”, Appl. Phys. Lett. v.66, 3251 (1995)
3. M. Razeghi, I. Eliashevich, J. Diaz, H.J. Yi, S. Kim, M. Erdtmann, D. Wu, L.J. Wang, “High Power aluminum-free InGaAsP/GaAs pumping diode lasers”, Materials Science and Engineering B35, 34 (1995)
2. J. Diaz, H. Yi, C. Jelen, S. Kim, S. Slivken, I. Eliashevich, M. Erdtmann, D. Wu, G. Lukas, and M. Razeghi, “High-Temperature Reliability of Aluminum-free 980 nm and 808nm Laser diodes”, Inst. Phys. Conf. Ser. v.145, 1041 (1995)
1. X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi, “Correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices”, Appl. Phys. Lett. v.65, 2812 (1994)